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if the anisotropy of an etch process is 045 sketch the etch profilewhat percentage of the etch rate in the vertical
for a particular plasma etch process in which the linear etch model is applicable a degree of anisotropy of 08 or
in an etch process there is a finite amount of purely chemical etching without any ion bombardment ie spontaneous
al spiking of si would not be a problem if the si diffusion in al were small and little si diffused into the al leaving
for 035-pm technology the junction depth before silicidation is about 100nmif you want to leave 50 nm of si after
a sourcedrain implant is done with arsenic with a dose of 1 x 1015 cm-2 and an energy of 40 keya titanium silicide
what are two reasons why the damascene process single damascene version might be used instead of the normal masked
05-microm-thickal lines are formed on a flat surface a layer of sio2 at least 1 pm thick is then deposited over this a
a damascene process is used to fabricate a tungsten via through a sio2 dielectric layer first the sio2 dielectric layer
a sio2 layer is deposited by lpcvd over a single 1-nm-wide 05-pm-high metal linethe deposition flux and time are such
if the grain boundary mobility mgb is 1 x 10-15 cm4 sec-1 erg-1 the grain boundary energy is 300 ergs cm-1 and the
an al interconnect line has polygranular clusters that are all equal or less than 5 microm long and a current density
a plot the deposition rate on a log scale versus 1t kelvin for 600-1200degc for a cvd system with the following
show that placing the source in an evaporation system at the inside surface of a sphere facing the center with the
calculate the deposition rate for a small planar surface evaporation source winch thetai 300 thetak 45deg the
the new deposition engineer installed the companys new evaporation system hoping to get uniform depositions on all the
what are the two commonly observed rate limiting steps in silicon epitaxial growth under what conditions do they
draw diagrams for a right-left rotation similar to those in the text for the left right rotationalso describe what
a boron implant is performed into silicon at 100 kev the boron beam is aligned with the silicon crystal so that
an engineer wants to form a shallow boron-doped sourcedrain junction for an advanced technologythe manager wants to
an nmos transistor is being built and an ion implantation is done after the gate oxide is grown and before the gate
extend the program in problem so that new records can be inserted or existing records can be deletedproblem write a
an engineer worried about avoiding punch through in an nmos device decides to perform a deep punch through implant
how thick does a mask have to be to reduce the peak doping of an implant by a factor of 10000 at the masksubstrate
extend the menu of options in problem 4 to include multiplication see exercise 6problem 4use the polynomial a1 class