A source/drain implant is done with arsenic with a dose of 1 X 1015 cm-2 and an energy of 40 key.
A titanium silicide layer is then formed on top of the source/drain regions to reduce the sheet resistance of those regions.
This is done by depositing Ti on the surface and annealing. 55 nm of suicide is formed, which consumes the top surface of the Si in the source/drain regions and as a result reduces the amount of As dopant in the Si.
What is the peak concentration of As in the Si in the source/drain regions after the silicidation process?
(Assume that the implant is done directly into the Si with no oxide and that no dopant diffusion or segregation occurs during the silicidation.)