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For RL =10 kO, draw the small-signal equivalent circuit of the amplifier and determine its overall voltage gain.
For VCC =15 V, R1 =100 kOR2 =47 kO, RE =3.9 kO, RC = 6.8 kO, and ß=100, determine the dc collector current and dc collector voltage of each transistor.
Replacing the transistor by its T model, draw the small-signal equivalent circuit of the amplifier.
For the emitter-follower circuit shown in Figure the BJT used is specified to have ß values in the range\ of 50 to 200.
If the dc component of vsig is zero, find the dc emitter current.
Replace the BJT with its T model (neglecting ro), and analyze the circuit to determine the input resistance Rin and the voltage gain vo/vsig.
Find the dc emitter currents of Q1: and Q2: Also, find the dc voltages VB1 and VB2.
A CE amplifier has a mid band voltage gain of / AM / =100 V/V, a lower 3-dB frequency of fL =100 Hz, and a higher 3-dB frequency fH =500 kHz.
The Maxwell relations in thermodynamics are obtained by treating a thermodynamic relation as an exact differential equation.
Since a reasonable design should operate for the best transistors for which ß is very high, do your initial design with ß=8.
Find the values of I and RB to bias the BJT at IC =1 mA and VC = 1.5 V. Let ß=100.
What must the relationship of RE to R1 and R2 be? For VCC =10 V and VBE =0.7 V, design the circuit to obtain an output current of 0.5 mA.
Calculate the overall voltage gain Gv of a common-source amplifier for which gm = 3 mA/V, ro = 100 kO, RD = 10 kO, and RG = 10MO.
Neglecting the Early effect, verify that the MOSFET is operating in saturation with ID =0.5 Ma and VOV =0.3 V. What must the MOSFET's kn be?
Find the largest sinusoid vˆsig that the amplifier can handle while remaining in the saturation region. What is the corresponding signal at the output?
What is the amplitude of the current pulses in the drain of Q1,What is the amplitude of the voltage pulses at the drain of Q1.
If terminal Y is grounded, find the voltage gain from X to Z with Z open-circuited. What is the output resistance of the source follower?
The NMOS transistor in the common-gate amplifier of Fig.(b) has gm = 10 mA/V and a large ro.
Calculate the dc drain current ID taking into account VA. Now, what value must the drain resistance RD have?
It is required to bias the transistor to operate at an overdrive voltage VOV =0.2 V. What must the dc voltage at the drain be?
If the signal amplitude across the base-emitter junction is to be limited to 10 mV, what is the corresponding amplitude of vsig and vo?
An emitter follower is operating at a collector bias current of 0.5 mA and is used to connect a 10-kO source to a 1-kO load.
The output resistance increased to 250O when the source resistance was increased to 10 kO.
If vsig is disconnected from node X, node X is grounded, and node Y is disconnected from ground and connected to vsig.
When the Early effect is neglected, the overall voltage gain of a CE amplifier with a collector resistance RC =10 kO is calculated to be -100 V/V.