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What is the maximum possible factor by which the output resistance can be raised, and at what value of Re is it achieved?
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In a MOS cascode amplifier, the cascode transistor is required to raise the output resistance by a factor of 50.
The cascode transistor can be thought of as providing a "shield" for the input transistor from the voltage variations at the output.
Which is operating at the same bias current and has the same minimum voltage requirement at the drain as in the circuit of Figure.
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For simplicity, we are assuming that the four transistors have the same gm and ro. The amplifier is fed with a signal vi.
The 0.13-µm CMOS fabrication process available has Vtp =-0.4 V, V1A =-6 V/µm, and µpCox = 100 µA/V2.
Find the overall voltage gain vo/vi and evaluate its value for the case gm1 = 2 mA/V and A0 = 30.
A cascode current source formed of two pnp transistors for which ß = 50 and VA = 5 V supplies a current of 0.2 mA.
Assume that the BJTs have ß =100 and that both the BJTs and the MOSFETs have / VA/ = 5 V.
In this problem, we will explore the difference between using a BJT as cascode device and a MOSFET as cascade device.
What will the extent of the linear region at the output become?
Find the value of the dc component that will result in the maximum possible signal swing at the output with almost-linear operation.
It is required to design the circuit to obtain a voltage gain Av = -40 V/V. Use devices of equal length L operating at I = 100 µA and / VOV/ = 0.25 V.
Assuming that Van = / VAp / and that the biasing current sources have output resistances equal to those of Q1: and Q2.
What is the peak of the largest output sine-wave signal that is possible while the NMOS transistor remains in saturation?
If Q2: and Q3: are to be operated at the same overdrive voltage as Q1: what must their W/L ratios be?
What are the extreme values of vO for which Q1: and Q2: just remain in saturation?
For finite ro( /VA /= 20 V), what is the voltage gain from G to D and the input resistance at G?
Neglecting the finite base currents of Q2: and Q3: and assuming that their VBE ?0.7 V and that Q2: has five times the area of Q3: find the value of I.
If it is required to raise the gain by a factor of 2, what channel length would be required, and by what factor does the total gate area of the circuit increas
A CG amplifier operating with gm = 2 mA/V and ro =20 kOis fed with a signal source having Rs =1 kO.
If RL increases by a factor of 10, by what percentage does the current gain change?
If the maximum allowed dc voltage drop across Rs is 0.3 V, what is the maximum available output resistance of the current source?