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A transistor operating with nominal gm of 40 mA/V has a ß that ranges from 50 to 150. Also, the bias circuit, being less than ideal, allows a ± 20% variation
A designer wishes to create a BJT amplifier with a gm of 30 mA/V and a base input resistance of 3000O or more What collector-bias current should he choose?
The problem investigates the nonlinear distortion introduced by a MOSFET amplifier. Let the signal vgs be a sine wave with amplitude Vgs
The purpose of problem is to illustrate the application of graphical analysis to the circuit shown in Fig. Sketch iC -vCE characteristic curves for the BJT
For the NMOS amplifier in Fig.replace the transistor with its T equivalent circuit, assuming ? = 0. Derive expressions for the voltage gains vs/vi and vd /vi
In the circuit of Fig the NMOS transistor has / Vt /= 0.5 V and VA = 50 V and operates with VD = 1 V. What is the voltage gain vo/vi ?
For a 0.18-µm CMOS fabrication process: Vtn = 0.5 V, Vtp = -0.5 V, µnCox = 400 µA/V2, µpCox = 100 µA/V2, Cox = 8.6 fF/µm2, VA (n-channel devices)
Figure shows a discrete-circuit amplifier. The input signal vsig is coupled to the gate through a very large capacitor (shown as infinite).
An NMOS technology has µnCox = 250 µA/V2 and Vt = 0.5 V. For a transistor with L = 0.5 µm, find the value of W that results in gm = 2 mA/V at ID = 0.25 mA
An NMOS amplifier is to be designed to provide a 0.20-V peak output signal across a 20-k_ load that can be used as a drain resistor
Sketch the iC -vCE characteristics of an npn transistor having ß = 100 and VA =100 V. Sketch characteristic curves for iB = 20 µA, 50 µA, 80 µA
Consider an NMOS transistor having kn = 10 mA/V2. Let the transistor be biased at VOV = 0.2 V. For operation in saturation, what dc bias current ID results?
All the transistors in the circuits of Fig. are specified to have a minimum ß of 50. Find approximate values for the collector voltages and calculate forced ß
Consider a transistor biased to operate in the active mode at a dc collector current IC. Calculate the collector signal current as a fraction of IC
An npn BJT with grounded emitter is operated with VBE = 0.700 V, at which the collector current is 0.5 mA.
A transistor with ß = 100 is biased to operate at a dc collector current of 0.5 mA. Find the values of gm, rp , and re. Repeat for a bias current of 50 µA.
A pnp BJT is biased to operate at IC =1.0 mA. What is the associated value of gm? If ß = 100, what is the value of the small-signal resistance
For the MOS amplifier of Fig.(a) with VDD = 5 V and kn = 5 mA/V2, it is required to have the end point of the VTC, point B, at VDS =0.5 V
It is required to bias the MOS amplifier of Fig at point Q for which VOV = 0.2 V and VDS = 1 V. Find the Required value of RD when VDD = 5 V, Vt = 0.5 V
The MOS amplifier of Fig.(a), when operated with VDD = 2 V, is found to have a maximum small-signal voltage gain magnitude of 14 V/V
Consider the amplifier of Fig(a) for the case VDD = 5 V, RD = 24 kO, k_ n(W/L) = 1 mA/V2, and Vt =1 V.
A BJT amplifier such as that in Fig is to be designed to support relatively undistorted sine-wave output signals of peak amplitudes P volt without the BJT
A designer considers a number of low-voltage BJT amplifier designs utilizing power supplies with voltage VCC of 1.0, 1.5, 2.0, or 3.0 V
A BJT amplifier circuit such as that in Fig. is operated with VCC = +5 V and is biased at VCE = +1 V. Find the voltage gain, the maximum allowed output