Discuss the follwoing:
Q: For a 0.18-μm CMOS fabrication process: Vtn = 0.5 V, Vtp = -0.5 V, μnCox = 400 μA/V2, μpCox = 100 μA/V2, Cox = 8.6 fF/μm2, VA (n-channel devices) = 5L (μm), (p-channel devices) = 6L (μm). Find the small-signal model parameters (gm and ro) for both an NMOS and a PMOS transistor having W/L = 10 μm/0.5 μm and operating at ID =100 μA. Also, find the overdrive voltage at which each device must be operating.