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it is observed that the sidewall slope in an etch process becomes more sloped as the temperature is reduced whythe
sip is deposited on a si wafer at 800degchow much stress is induced in the film due to the cooling of the wafer from
consider a surface that has a region that is concave and as well as a region that is convexduring reflow will atoms
calculate the mean free path of a particle in the gas phase of a deposition systemand estimate the number of collisions
in an epitaxial deposition under mass transfer limited conditions is it more important to control the reactor
in a reactor used for epitaxial growth the wafers are normally placed flat on the susceptor and epi grows on the top
for cvd deposition of a film it is found that the mass transfer coefficient hg 10 cm sec-1 and the surface reaction
a using schematic diagrams show qualitatively how changing the gas pressure in a standard pvd system using an
how does the ability to fill the bottom of a narrow trench using sputter deposition change as the target is moved
explain how asymmetric depositions can occur on a wafer in a sputter deposition systemasymmetric deposition means that
what value of n in the arrival angle distribution is desired for good step coverage over a step in topography for good
we have seen how conformal coverage in low pressure systems results from a low sticking coefficient which causes
why might pure chemical etching such as in wet etching be adequate for patterning the silicon nitride layer used to
if the etch anisotropy is 0 what is the undercut or etch bias when etching a 05-pm thick film what is the undercut when
in a certain process it is desired that the pitch of metal lines be equal to or less than 10 microm the pitch equals
what are the advantages and disadvantages of reactive ion etching versus sputter etchingcite a hypothetical example of
it is found that a certain plasma etch chemistry in a certain rie etch system pro-duces vertical sidewalls with zero
what would you expect would happen to the threshold voltage of a mos transistor if the gate oxide were deposited
a 1 x 1014 cm-2 phosphorus implant through a 200-nm sio2 mask layer is performed so the peak concentration is at the
phosphorus is implanted at 50 kev with a dose of 1 x 1014 cm-2calculate the junction depth where the phosphorus meets
an implant machine for 300-mm wafers is required to have a throughput of 60 wafers per hourwhat beam current is
in the ion implantation process positively charged ions impact on the semiconductor surface normally these ions are
an engineer investigating solid-phase epitaxial regrowth after amorphizing ion implants of various species p b si geas
in two separate experiments as and then b are implanted through a thin sio2 layer into the underlying substrateas a