As a result of the implantation some of the oxygen atoms in, Science

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As a result of the implantation some of the oxygen atoms in

In two separate experiments, As and then B are implanted through a thin SiO₂ layer into the underlying substrate.

As a result of the implantation, some of the oxygen atoms in the SiO₂ layer are knocked into the silicon substrate.

Would you expect the As or the B to produce more oxygen knock-ons? Why?

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