A 1 x 1014 cm-2 phosphorus implant through a 200-nm SiO2 mask layer is performed so the peak concentration is at the silicon/SiO2 interface. An anneal is then performed for 30 min at 1000°C.
Calculate the location of the junction with the substrate doped at 1 x 1015 cm-3. Assume no diffusion in the masking layer and ignore any segregation effects.
Assume the same range statistics for SiO2 and Si.