Problem
1. What is the effective dielectric constant of nitride/ BCB/nitride (20 nm/500 nm/20 nm) stack when ε = 7 and 2.5, respectively?
2. What is the etch or polish selectivity needed in a lowk approach that uses 20 nm thick nitride etch/polishstop layers on 300 nm low-k material?
The response should include a reference list. Double-space, using Times New Roman 12 pnt font, one-inch margins, and APA style of writing and citations.