Problem
1. Shallow junctions are needed for advanced CMOS. Compare B-implanted p+/n and As-implanted n+/p shallow junctions (5 × 1015 cm-2 dose), when substrate doping level is 5 × 1017 cm-3.
2. Check with your simulator for sheet resistances, junction depths and film thicknesses of the 5µm CMOS process described in the text. Make sure to select a proper cross section for your 1D simulation.
The response should include a reference list. Double-space, using Times New Roman 12 pnt font, one-inch margins, and APA style of writing and citations.