Problem
1. Ion implantation of boron at 40 keV with dose 1013 cm-2 is done for CMOS p-well formation. The wafers are 4 ohm-cm phosphorus doped. Well depth (position of pn-junction) is designed to be 5µm. What diffusion times/temperatures should be used?
2. CMOS S/D implantation is made with arsenic (50 keV, 5 × 1015 cm-2). Designed junction depth is 0.4µm. Find implant activation conditions when 40 nm of dry oxide forms during activation.
The response should include a reference list. Double-space, using Times New Roman 12 pnt font, one-inch margins, and APA style of writing and citations.