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define shunt capacitors and reactorsshunt capacitors absorb leading vars ie they are used to supply lagging vars whereas reactors are used to absorbs
define access time for magnetic diskthe sum of seek time and rotational delay is known as access time for disks normal 0 false false false
define miss penaltythe extra time required to bring the desired information into the cache is known as miss
define miss rateit is the number of misses states as a fraction of attempted
what are the two ways of constructing a larger module to mount flash chips on a small cardthe two ways are-a flash cardsb flash
what is hita successful access to data in cache memory is known as hit normal 0 false false false en-in x-none x-none
what are the mapping techniquesadirect mappingb associative mappingc set associative
what is load-through or early restartwhen a read miss happens for a system with cache the needed word may be sent to the processor as soon as it is
what is write-back or copy-back protocolfor a write operation using this protocol during write-hit the method is to update only the cache and to mark
what is write-through protocolfor a write operation using write-through protocol during write-hit the cache location and the major memory location
what are the two ways in which the system using cache can proceed for a write operation write by protocol technique write-back or copy-back protocol
define cache linecache block is used to refer to a set of contiguous address location of some size cache block is also referred to as cache
what are the two aspects of locality of reference define themtwo aspects of locality of reference are temporal aspects and spatial aspect temporal
what is locality of referenceanalysis of program represents that many instructions ion localized areas of the program are implemented repeatedly
define flash memoryit is an approach same to eeprom technology a flash cell is based on a one transistor controlled by trapped charge just like an
what is cache memoryit is a small fast memory that is inserted among large slower main memory and the processor it decreases the memory access
define series var compensationfor very long transmission lines the inductive reactance of the line becomes so high that not much power can be
explain flash devicesit is possible to read the contents of a one cell but it is only possible to write an whole block of cellsgreater density which
explain loads - generation and absorption of reactive powera load at 095 power factor implies a reactive power demand of 033 kvar per kw of power
define cables - generation and absorption of reactive powerit is well known that the shunt capacitance of the cable is very large as compared to that
explain overhead lines and transformersoverhead lines absorb reactive power when fully loaded a line with a current i a a line reactance of xl phase
what are advantages and disadvantages of using eepromthe benefits are that eeprom do not have to be removed for erasure also it is possible to delete
what are disadvantages of epromthe chip must be physically removed from the circuit for reprogramming and its whole contents are erased by the uv
why eprom chips are mounted in packages that have transparent windowsince the erasure needs dissipating the charges trapped in the transistors of
asolid circular shaft of 25 cm diameter is to be replaced by a hollow shaft the ratio of external to internal diameters being 2to1find the size of