How far metallic impurities diffuse during thermal oxidation


Problem

1. How far will metallic impurities diffuse during thermal oxidation?

2. Which is faster, the diffusion of boron or phosphorus?

3. Boron-doped oxide film (200 nm thick, concentration 1021/cm3) is deposited on phosphorus-doped wafer (1015/cm3 phosphorus concentration). What is the junction depth doping after a 300 min, 1100 oC diffusion step?

4. What is the magnitude of emitter-push effect?

5. What is the magnitude of OED? Run some simulations to find which process parameters are important.

The response should include a reference list. Double-space, using Times New Roman 12 pnt font, one-inch margins, and APA style of writing and citations.

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Chemistry: How far metallic impurities diffuse during thermal oxidation
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