An abrupt silicon pn junction at zero bias has dopant, Electrical Engineering

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An abrupt silicon pn junction at zero bias has dopant

An abrupt silicon pn junction at zero bias has dopant concentrations of Na = 1017/cm3 and Nd = 5 x 1015 cm-3 at T = 300K. (a) Calculate the Fermi level on each side of the junction with respect to the intrinsic Fermi level. (b) Sketch the equilibrium energy band diagram for the junction and determine Vbi from the diagram and the results of part (a). (c) Calculate Vbi using Equation 2.14 from Volume 2 PN Junction Diode, and compare the results to part (b). (d) Determine xno, xpo, and the peak electric field for this junction.

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Electrical Engineering: An abrupt silicon pn junction at zero bias has dopant

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Recent Questions Asked Electrical Engineering

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Reference No:- TGS0586428

Recent Questions Asked Electrical Engineering

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