A silicon abrupt junction, approximated by a step junction, has a doping of NA= 5 x1015/cm3 and ND= 1015/cm3 and a cross-sectional area (A) of 10-4cm2. Assume the depletion approximation, VA=0, and ni=1010/cm3 to:
a. Calculate Vbi.
b. Calculate the total depletion width.
c. What is the total positive ionic charge in the depletion width?
d. Calculate the electric field at x=0.
e. Sketch to a relative x-axis scale the charge density and electric field.
f. Calculate the values of np , and pn in the bulk regions.
g. Draw the electron energy band diagram for the device.
h. What percentage of W is the p-depletion region? The n-depletion region?