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q for a p-channel jfet in its active region specify the polarities of voltages and the directions of conventional
q using the small-signal equivalent circuit of a bjt with gm 003 s beta 75 and va 65 v a load resistor rl is connected from the collector to the
q for a bjt with vbe 07v icbo 4 na ie 1 ma and ic 09 ma evaluate alpha ibise and
q the parameters of a bjt are given by alpha 098 icbo 90 na and ic 75 ma find beta ib and
q a silicon bjt has an emitter current of 5m aat 300 k when the bej is forward-biased by vbe 07 v find the reverse saturation current of the bej
q a particular bjt has a nominal value of alpha 099 calculate the nominal betaif alpha can easily change plusmn1 compute the percentage changes that
q a transistor has a base current ib 25 microa alpha 0985 and negligible icbo find beta ie and i
q two identical junction diodes whose volt-ampere relation is given by equation in which is 01 microa vt 25 mv and eta 2 are connected as shown in
q consider a reverse-biased diode with a source voltage vb in series with a load resistance rl write the kvl equation for the
q a diode is connected in series with a voltage source of 5 v and a resistance of 1 k the diodes saturation current is given to be 10-12a and the i-v
q a silicon diode is forward-biased with v 05 v at a temperature of 293 k if the diode current is 10 ma calculate the saturation current of the
q a semiconductor diode with is 10microa and a 1-k resistor in series is forward-biased with a voltage source to yield a current of 30ma find the
q assuming the diode to obey i is ev0026 -1 calculate the ratio vi for an ideal diode with is 10-13 a for the applied voltages of -2-05 03 05 07 10
q explain the action of a pn-junction with bias consider both the forward bias and the reverse bias and use sketches wherever
a zipper has n links every link has a state in which it is closed with energy 0 and a state in which it is open with energy 0 we require that the
conceive a system composed of a very large number n of distinguishable atoms at rest and mutually noninteracting each of which has only two
q a silicon npn bjt is biased by the method shown in figure with re 240 r2 3000 and vcc 24 v the operating point corresponds to vbeq 08v ibq
q athree-phase 60-hz transmission line has a total series impedance of 2286 623deg per phase it delivers 25 mw at 138 kv to a load connected to its
q a60-hz three-phase transmission line has a total per-phase series impedance of 35j140 ifit delivers 40 mw at 220 kv and 09 power factor lagging
q on a per-phase basis let v radic2 v cos omegat and i radic2 i cos omegat - thetaa express the instantaneous power st in terms of real power p and
q consider an upgrade of a three-phase transmission system in which the operating line-to-line voltage is doubled and the phase or line currents are
q for a transmission-line model that includes only the series impedance z sketch phasor diagrams fora lagging power factor loadb leading power factor
q consider a lossless transmission line with only a series reactance xa find an expression for the real power transfer capacity of the transmission
q a balanced delta-connected load has a per-phase impedance of 45 60deg it is connected to a three-phase 208-v 60-hz supply by a three- phase feeder
q athree-phase 60-hz substation bus supplies two wye-connected loads that are connected in parallel through a three-phase feeder that has a per phase