Answer the following questions.
(a) In an older MOSFET technology. the field oxide is a 1 ,",m thick thennal oxide. Would you grow it in a dry or wet ambient? Why?
(b) For etching a small feature with faithful replication of the resist pattern, is dry or wetetching technique preferred? Why?
(c) If the junction depth is to be kept as small as possible, which ion species would you use to make a P- N junction (for an ion implantation process on a P-type silicon substrate)? Give reasons to support your answer.
(d) If you want to deposit oxide at the lowest possible temperature, what processing technology would you use?
(e) What processing technology would you use to deposit aluminum? What is the processing technology you would use to etch a fine aluminum line? What chemicals are involved?
