The junction capacitance of a silicon pn junction is 1.83 pF at T = 300 K when the anode and cathode are held at the same voltage. The concentration of donor atoms in the n-region of the junction is 1016 cm ^-3, and the concentration of acceptor atoms in the p-region is 1015 cm ^-3. Determine the value of the junction capacitance when a reverse-bias voltage of 3 V is applied.