Determine the conductivity of silicon at t 300 k if it is


Determine the conductivity of silicon at T = 300 K if it is doped with donor impurity atoms at a concentration of 1.25*1016 cm-3. Assume that the electron and hole mobilities are 1350 cm2 / V-s and 480 cm2 / V-s, respectively.

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Electrical Engineering: Determine the conductivity of silicon at t 300 k if it is
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