A si p-n junction has a donor doping of 51016 cm-3 on the n


A Si p+-n junction has a donor doping of 5*10^16 cm^-3 on the n side and a cross sectional area of 10^-3 cm^2. If τ(p)= 1μs and D(p) = 10cm^2/s, calculate the current with a forward bias of .5V at 300K.

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Electrical Engineering: A si p-n junction has a donor doping of 51016 cm-3 on the n
Reference No:- TGS0615121

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