In a p-n junction the n side has a donor concentration of, Electrical Engineering

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In a p-n junction the n side has a donor concentration of

in a p+-n junction, the n side has a donor concentration of 10^16 cm^-3. if ni=10^10cm^-3, the relative dielectric constant εr = 12, dn=50cm^2/s, Dp = 20cm^2/s, and the electron and hole minority carriers have lifetimes τ=100ns and 50 ns, respectively, and a forward bias of .6V, calculate the hole diffusion current density 2μm fromt he depletion edge of the n side. if we double the p+ doping, what effect will it have on this hole diffusion current?

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Electrical Engineering: In a p-n junction the n side has a donor concentration of

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Electrical Engineering: In a p-n junction the n side has a donor concentration of

Reference No:- TGS0615123

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Recent Questions Asked Electrical Engineering

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Electrical Engineering: In a p-n junction the n side has a donor concentration of

Reference No:- TGS0615123

Recent Questions Asked Electrical Engineering

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