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construction - unijunction transistorconstruction the basic structure of uni junction transistor is shown in fig a it essentially consists of a
unijunction transistor abbreviated as ujt also called the double base diode is a 2 layer 3 terminal solid state switching device the device has a
diode circuitsprob a draw the piecewise linear volt ampere characteristic of a p n diode what are the circuit models for the on state and the off
hall effect experimentprob write short note on hall effect and its applications what properties of a semiconductor are determined from a hall effect
properties of a semiconductorwhat properties of a semiconductor are determined from a hall effect experiment sol the hall effect experiment is used
fermi dirac levelsol the fermi level is simply a reference energy level it is the energy level at which the probability of finding an electron n
diffusion current the carrier currents are also due to concentration gradients in the doped material which lead to diffusion of carriers from high
drift current density and conductivityconsider a conductor of length meters and cross sectional area a square meters as shown in fig let the number
drift current and diffusion current there are two mechanisms in which electrons and holes move through a semiconductor one of these is termed as
define diffusion lengthsol diffusion length is defined as the distance travelled by free carriers before recombining it may also be defined as the
number of holes in valence bandderive the expression for number of holes in valence band and fermi level in an intrinsic semiconductorb by that
applications of hall effecti to determine whether semiconductor is of n type or p typeii to determine carrier concentrationiii measurement of
explain hall affect and derive the mathematical expression for hall coefficient also describe its applicationssol hall effectif a metal or
continuity equationexplain continuity equation and discus the special case of continuity equation when concentration is independent of time and with
energy bandthe energy band picture forii an- type and iii ap - type semiconductor indicate the position for the donor and acceptor levelssola fermi
effective negative voltageeffect negative voltage of get when depend upon pitch of voltage the level of that results in id 0 ma is defined by eggs vp
construction and operation of jet jet is a three terminal device one terminal capable of controlling the current between the other two basic
field effect transistorprimarily difference between bit and jet is that bit transistor is a current controlled device while jet is a voltage
dc basing bitsoperating point operating is cut off saturation and linear region of bits character are provided as follow1 linear-region
common emitter configurationeven in common emitter configuration current relation is like is same like common bias configuration for common emitter
common base configuration for pap transistor connection for common base operation is as follow common base means base is common to both input and
bipolar junction transistortransistor construction the emitter layer is heavily doped the base is light doped and the collector is only lightly doped
example of clamper circuitsexample of clamper circuits are as followvoltage multiplier circuit voltage circuit is employed to maintain a relatively
clipper circuitsclipper circuit have ability to clipper of portions of the input signals without distorting the remaining part of the alternating
diode currentzener region when the reverse biased voltage is increase to a very high value then a point is reached where will is suddenly going a