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A 25KVA single phase transformer has 220 turns on the primary and 80 turns on the secondary. The primary is connected to 1500V, 50Hz supply. Calculate primary and secondary currents on full load sec
how to write a VHDL or an ABEL or a Verilog program using Active HDL 6.3 Student Edition or Xilinx Student Edition 6.31 for a generic 3-to-8 binary decoder with active-high inputs and outputs but wi
(a.) the short dipole far fields (b.) the time-average power density in the far field of the short dipole (c.) the total radiated power radiated by the short dipole (d.) the radiation resistance of
The current distribution on a center-fed short dipole (length l n ë) centered at the coordinate origin and lying along the z-axis can be written as where Io defines the peak value of the curren
A Hertzian dipole of length Äl = 0.6 mm in air carries a current of Io = 10 mA at a frequency of 10 GHz. The antenna is located at the coordinate origin and the antenna current is oriented alon
A 500-kVA transformer is at full load and 0.60 lagging power faactor. A capacitor bank is added, improving the power factor to 0.90 lagging. After improvement, what percent of rated kVA is the trans
A 25-kVA load with power factor 0.80 lagging has a group of resistive heating units added at unity power factor. How many kW do these units take, if the new overall power factor is 0.85 lagging
The addition of a 20-kvar capacitor bank improved the power factor of a certain load to 0.90 lagging. Determine the complex power before the addition of the capacitors, if the final apparent power i
Your code should ensure that the input characters are, in fact, part of the upper case alphabet. In the event of an incorrect input, your code should print a message indicating the offending charact
A serial parity bit generator is a sequential circuit that does the following: It receives an N-bit message followed by a zero (so there are N+1 clock bits to send the message). At the output the ci
why would a company's manager be concerned about the quantity of its purchase returns if its suppliers allow unlimited returns
a circuit with a resistor is connected to a DC supply and a Current of 2A and producing a heat. What is the rms Voltage that must be applied by a AC supply to produce 3 times this heat if all other
Let x[n] be a finite sequence that is nonzero for n [N1, N2], and h(n) be a finite sequence that is nonzero n [N3, N4]. Answer the followings: a. For fixed n, what is the range of k that makes h(n-k
A uniform surface charge density of 20 [nC/m^2] is present on the spherical surface r=.6 cm in free space. (a) Find the absolute potential Φ at P(r =1cm,θ=25,φ=50). (b) Find Vab, given
A phosphorus diffusion has a surface concentration of 5 x 10^18/cm^3,and the background concentration of the p type wafer is 1 x 10^15/cm^3.The Dt product for the diffusion is 10^-8 cm^2.
A boron diffusion into a 1 -ohm-cm n type wafer results in a Gaussian profile with a surface concentration of 5 x 10^18/cm^3 and a junction depth of 4um. a)how long did the diffusion take if the dif
Write an MIPS assembly language program to calculate (2* ! N ) where ! is the factorial of a given positive integer N using loop.
Design a synchronous sequential circuit to control the operation of an automatic coffee machine. A cup of coffee costs 15cents and the machine has two input slots. In one slot Only 10cent coins can
A Gaussian beam has a waist of 1.0 mm located 20.0 cm away from a thin converging lens of focal length 10.0 cm. If the wavelength of the source is 633 nm, what is the size and location of the output
Dtermine the resistancevalues for avoltage divider that must meet the following specifications. The currrent drain under the unload condition is nit to exceed 5mA. The soure voltage is to be 10V and
A conical section of material extends from 2.0 cm = r = 9.0 cm for 0 = (theta) = 30° with (permitivity) = 9.0 and (omega) = 0.020 S/m. Conductive plates are placed at each radial end of the sect
Explain three different algebraic methods that can be used to minimize equations. In your explanation write generalized equations to show how each method is used. Notice the requirement is to explai
Consider the impurity diffusion of gallium into a silicon wafer. If gallium is diffused into a silicon wafer (with no previous gallium in it) at a temperature of 1100oC for 3h, what is the depth bel
show that if n=4, a cell can be split into four smaller cells, each with half the radius and 1/16 of the transmitter power of the original cell. If extensive measurements show that the path loss exp
When we shift left we fill in the 0's so that a shift of one left gives x1 = 0110 and x2 = 1110. When we shift right we fill with the sign bit, so that a shift of one right gives x1 = 1011 and x2 =