Assignment
Answer /discuss the following 5 questions. Your answers should be 2-3 sentences long with detailed explanations. Also solve the following 4 problems and include detailed formulations, calculations and explanations.
Questions:
1) In BJT transistors, both type of carriers, electrons and hole contribute to total current. Can you explain why the mobility of electrons is about 2.5 times more than the mobility of holes?
2) Explain why mobility of carriers reduces for high doping concentrations?
3) Why a DC bias is needed for a transistor circuit?
4) How a DC load-line is defined for BJT transistor circuit?
5) Why waveform distortion happens in amplifier circuits?
Problems:
1) The following transistor has a ßDC of 50. Determine the value of RB required to ensure saturation when VIN is 5V. What must VIN be to cut off the transistor? Assume VCE(sat) = 0V.
2) Find IB, IE, and IC in the following circuit if aDC = 0.98.
3) For the following circuit with a BJT transistor, determine the DC values of:
(a) IE (b) VE (c) VB (d) IC (e) VC (f) VCE
4) Determine all transistor terminal voltages with respect to ground.
