Problem
1. What is the best possible resolution in optical contact lithography?
2. What is the diffraction limited resolution of 10 nm X-ray photons?
3. 100 mm diameter silicon wafer has 1µm lines fabricated on it. The photo mask is made of soda lime glass with a coefficient of thermal expansion (CTE) of 10 ppm (10 × 10-6 / oC). How accurately must the temperature in the patterning process be controlled in order to keep distortions from thermal expansion over 100 mm wafer below 0.3µm? Silicon CTE is 2.5 × 10-6 / oC.
4. Make a graphical presentation of projection lithography resolution versus depth of focus!
5. A 50µm thick resist must be used in an electroplating process. What is the minimum feature size that can be used?
The response should include a reference list. Double-space, using Times New Roman 12 pnt font, one-inch margins, and APA style of writing and citations.