1. Silicon dioxide breaks down at high electric fields. Explain what happens if ideal scaling is performed while keeping the gate oxide thickness constant.
2. The maximum doping level that can be established in the source and drain regions is limited by the "solid solubility" of silicon. Explain what happens to the S/D junction capacitance and series resistance as ideal scaling occurs, but the S/D doping level remains constant. Does DIBL become more or less significant?