Design low pass active filter with a cutoff frequency t at
Design low pass active filter with a cutoff frequencyt at 10kHz or more by 30db and have the pass band gain positive that does not deviate from 20db by more than 3db. The pass band frequency needed is 800Hz and below Derive transfer function
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If the equilibrium concentration of Cd2+ ion is 1.5 X 10-6 M, calculate the equilibrium concentration of OH- in an aqueous equilibrium between solid Cd(OH)2 and its ions. (Ksp for Cd(OH)2 is 2.5 X 10-14)
Iron and oxygen react to form iron(III) oxide; 4Fe(s)+3O2(g)-->2Fe2O3(s). Determine the limiting reactant in each of the following mxtures of reactants
After a package is ejected from the plane, how long will it take for it to reach sea level from the time it is ejected Assume that the package, like the plane, has an initial velocity of 200 mph in the horizontal direction.
Cooling water from a river flows through the condenser (the low-temperature heat exchanger) at the rate of 1.2×108L/h (?30 million gallons per hour). If the river water enters the condenser at 18?C, what is its exit temperature
Design low pass active filter with a cutoff frequency t at 10kHz or more by 30db and have the pass band gain positive that does not deviate from 20db by more than 3db. The pass band frequency needed is 800Hz and below Derive transfer function
Iron and oxygen react to form iron(III) oxide; 4Fe(s)+3O2(g)-->2Fe2O3(s). Determine the limiting reactant in each of the following mixtures of reactants: a) 2.0 mol of Fe and 6.0 mol of O2. b) 5.0 mol of Fe and 4.0 mol of O2. c) 16.0 mol of Fe
A bar of p-type silicon, has a cross-sectional area A = 10-6 cm2 and a length L = 1.2 x 10-3 cm. For an applied voltage of 5V, a current of 2mA is required. What is the required (a) resistance, (b) resistivity, and (c) impurity doping concentratio
a portable cd player uses a current of 7.50 mA and has a resistance of 465, If the player uses 24-gauge wire (A= 0.20 mm2) with a length of 6.50 cm, what is the resistivity of the wire
The steady-state electron distribution in silicon can be approximated by a linear function of x. The maximum electron concentration occurs at x = 0 and is n(0) = 2.0 x 1016cm-3. At x = 0.012cm, the electron concentration is 5.0 x 1015cm-3.
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