A bar of p-type silicon has a cross-sectional area a 10-6


A bar of p-type silicon, has a cross-sectional area A = 10-6 cm2 and a length L = 1.2 x 10-3 cm. For an applied voltage of 5V, a current of 2mA is required. What is the required (a) resistance, (b) resistivity, and (c) impurity doping concentration? (d) What is the resulting hole mobility?

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Electrical Engineering: A bar of p-type silicon has a cross-sectional area a 10-6
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