Describe the basic operation of the n-channel MOSFET, the relationship to VGS, VDS an IDS. This would include such things as accumulation, inversion, pinch-off point, etc. Which end is the drain? Sketch a typical I-V curve. How is the depletion mode MOSFET different - describe in terms of both operation and construction. Explain why IDS increases with increasing VDS in the saturation region?