Assignment:
Oxygen causes indirect problems in controlling the electrical properties of silicon transistors and intergrated circuits as described. The segregation coefficient of oxygen in Si is unit. Can oxygen impurity be removed from Si using the zone refining technique? How can oxygen be removed during the growth of silicon crystal?
Your answer must be, typed, double-spaced, Times New Roman font (size 12), one-inch margins on all sides, APA format and also include references.