Consider an n-si with doping of 91016cm-3 in a certain
Consider an n-Si with doping of 9*10^16cm^-3. In a certain region of this sample, there is an electric field of 1000V/cm. Estimate the electron and hole drift velocity and the total drift current density in that region.
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Compute the equilibrium carrier concentrations and the position of the Fermi level with respect to the conduction band edge for a uniformly doped Si region with N_D=1*10^16 cm^-3 and N_A = 1*10^17 cm^-3 at room temperature.
Calculate the molar mass of the unknown gas. Remember that the faster the rate of effusion, the shorter the time required for effusion; that is, rate and time are inversely proportional.
Calculates the project duration, and identifies the critical path. While preparing the project plan, categorise the project tasks in the different phases of initiating, requirements gathering, design, development and testing, documentation, and de
An assembly line with 7 tasks is to be balanced. The longest task is 8 minutes, the shortest task is 2 minutes, and the sum of the task times is 53 minutes. The line will operate for 6 hours per shift, 1 shifts per day, 6 days per week.
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Calculate the rms (average) speed of PH3 atoms or molecules at 123 oC. Use R = 8.314 kg-m2/K-s2-mol for the value of the gas constant. The average speed of a PH3 atom/molecule at 123 oC is 539 m/s.
Design Problem- the circuit must have the following transfer function: Tv(s)=+- (s+125)(s+500)/(s+250)(s+1000) a)design the circuit using two Omp-amps B) design a circuit using only one omp-amp c) design a circuit using no omp amp *in all designs
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