An ideal one sided silicon np junction has uniform doping, Electrical Engineering

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An ideal one sided silicon np junction has uniform doping

An ideal one sided silicon n+p junction has uniform doping on both sides of the abrupt junction. The doping relation is Nd=50Na. the built in potential barrier is Vbi=0.752 V. the maximum electric field in the junction is Emax=1.14*10^5 V/cm for a reverse bias voltage of 10 V. T=300K. Determine (a) Na,Nd (b) xp for Vr=10 and (c) C'j Vr=10.

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Electrical Engineering: An ideal one sided silicon np junction has uniform doping

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Electrical Engineering: An ideal one sided silicon np junction has uniform doping

Reference No:- TGS0613020

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Recent Questions Asked Electrical Engineering

Q : A silicon abrupt junction in thermal equilibrium at t300 k

Q : Determine the transmission coefficient for the system for

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Q : An ideal one sided silicon np junction has uniform doping

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Request for Solution File

Ask an Expert for Answer!!

Electrical Engineering: An ideal one sided silicon np junction has uniform doping

Reference No:- TGS0613020

Recent Questions Asked Electrical Engineering

Q : A silicon abrupt junction in thermal equilibrium at t300 k

Q : Determine the transmission coefficient for the system for

Q : A space station is constructed in the shape of a hollow

Q : You take 1 ml of your sample and dialyze it in 1000 ml of

Q : An ideal one sided silicon np junction has uniform doping

Q : A three-step cycle is undergone by n moles of an ideal

Q : Attempting to recrystallize a compound but it wont dissolve

Q : Two identical diverging lenses are separated by 15 cm the

Q : Implement the carry-out and sum functions for a 1-bit full

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