A silicon abrupt junction in thermal equilibrium at t300 k, Electrical Engineering

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A silicon abrupt junction in thermal equilibrium at t300 k

A silicon abrupt junction in thermal equilibrium at T=300 K is doped such that Ec-Ef=0.21 eV in the n region and Ef-Ev=0.18eV in the p region.
(a) draw the energy band diagram of the pn junction.
(b) determine the impurity doping concentration in each region.
(c) determine Vbi.

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Electrical Engineering: A silicon abrupt junction in thermal equilibrium at t300 k

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Electrical Engineering: A silicon abrupt junction in thermal equilibrium at t300 k

Reference No:- TGS0613016

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Electrical Engineering: A silicon abrupt junction in thermal equilibrium at t300 k

Reference No:- TGS0613016

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