An Al0.3Ga0.7As p-n junction LED with doping level ND = 1 x 10^18 cm-3 on n-side and NA=1x10^15 cm-3 on p-side has Vf = 0.9 V forward bias across its junction. The LED cross-section is 200 µm x 200 µm. Electron/hole radiative and non-radiative lifetimes are 20 ns and 180 ns correspondingly; diffusion coefficient of electron is 155.4 cm^2/s and ni = 5 x 10^6 cm-3.
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