A silicon p-n-p BJT was designed to have doping levels of 1020 cm-3, 1015 cm-3, and 1017 cm-3 in different parts. a. Identify which doping level was intended for the emitter, for the base, and for the collector. b. Assuming the intrinsic carrier concentration (ni) in silicon to be 1010cm-3, calculate the Fermi Energy, EF, relative to the intrinsic Fermi energy, EFi for each layer. c. Hence draw the energy band diagram for the BJT labelling the energy scale clearly to show the relative positions of EF and EFi across the structure. d. Calculate the built-in potential at each junction in equilibrium (no bias conditions).