A pn-junction is formed in silicon by doping one side with


A pn-junction is formed in silicon by doping one side with acceptor atoms at concentration Na = 10^19 cm^(-3) and another side with donor atoms at Nd = 10^18 cm^(-3). What is the dopant concentration on the p-type side and on the n-type side?

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Electrical Engineering: A pn-junction is formed in silicon by doping one side with
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