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For what value of VB does the transistor cut off? Saturate? In each case, what values of VE and VC result?
Design a circuit using a pnp transistor for which a ? 1 using two resistors connected appropriately to ±3 V so that IE = 0.5 mA and VBC = 1 V.
With RB = 100 kO, what value of ß would return the voltages to the values first calculated?
What is the expected range of collector current and collector voltage corresponding to tfull range of ß values?
Find the value for RC to obtain VC = +2 V. What happens if the transistor is replaced with another having ß=100?
Measurements on the circuits of Figure produce abeled voltages as indicated.
A pnp power transistor operates with an emitter-to-collector voltage of 5 V, an emitter current of 5 A, and VEB = 0.8 V. For ß=20.
What value of ß does a meter reading of full scale correspond? What is ß if the meter reading is 1/5 of full scale? 1/10 of full scale?
To what value canRC be increased while the collector current remains unchanged?
If the transistor is operated at a fixed emitter-base voltage of 700 mV, what emitter current flows at 20°C? At 50°C?
Evaluate the ratio of the slopes of the iC-vBE curve at Vbe 700 mV and at vBE = 500 mV.
Find the emitter, base, and collector voltages and currents. Use ß=50, but assume|VBE| = 0.8 V independent of current level.
If the base lead is open-circuited while the emitter is connected to ground, and the collector is connected to a positive supply.
What voltage would you expect at node E? Noting that the temperature coefficient t of vBE for IE constant is -2 mV/°C, what is the TC of vE?
What is the value of the Early voltage for this transistor? For operation at 10 mA, what would the output resistance become?
Find the collector currents that you would expect for operation at vBE = 700 mV for transistors for which IS = 10-13 A and IS = 10-18 A.
For our purpose here we wish to determine the vBE required to establish a collector current of 1 mA in each of the two typical devices.
Consider an npn transistor whose base-emitter drop is 0.76 V at a collector current of 5 mA.
For a transistor whose nominal ß is 100, find the percentage change in its a value corresponding to a drop in its ß of 10%.
Calculate the range of collector and emitter currents that can result. What is the maximum power dissipated in the transistor?
If the transistor is operated in the active mode with vBE set to 0.700 V, find the expected range of iC, iB, and iE.
An npn transistor has a CBJ with an area 100 times that of the EBJ. If IS = 10-15 A, find the voltage drop across EBJ and across CBJ.
Calculate the missing current value as well as a, ß, and IS as indicated by the table.
When operated in the active mode, a particular npn BJT conducts a collector current of 1 mA and has Vbe =0.70 Vand iB =10 µA.
If ß =100 and IS = 5 × 10-15 A, find the voltages at the emitter and the collector and calculate the base current.