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Find the collector currents that you would expect for operation at vBE = 700 mV for transistors for which IS = 10-13 A and IS = 10-18 A.
For our purpose here we wish to determine the vBE required to establish a collector current of 1 mA in each of the two typical devices.
Consider an npn transistor whose base-emitter drop is 0.76 V at a collector current of 5 mA.
For a transistor whose nominal ß is 100, find the percentage change in its a value corresponding to a drop in its ß of 10%.
Calculate the range of collector and emitter currents that can result. What is the maximum power dissipated in the transistor?
If the transistor is operated in the active mode with vBE set to 0.700 V, find the expected range of iC, iB, and iE.
An npn transistor has a CBJ with an area 100 times that of the EBJ. If IS = 10-15 A, find the voltage drop across EBJ and across CBJ.
Calculate the missing current value as well as a, ß, and IS as indicated by the table.
When operated in the active mode, a particular npn BJT conducts a collector current of 1 mA and has Vbe =0.70 Vand iB =10 µA.
If ß =100 and IS = 5 × 10-15 A, find the voltages at the emitter and the collector and calculate the base current.
It is required to calculate the values of RB and RC that will establish a collector current IC of 0.5 mA and a collector-to-emitter voltage VCE of 1 V.
For each of three values of vCE (namely, 0.4 V, 0.3 V, and 0.2 V), find vBC, iBC, iBE, iB, iC, and iC/iB.
The collector is Connected to a negative supply of -5 V via a 8.2-kO resistor, find the collector voltage, the emitter current, and the base voltage.
The fact that the collector current changes by less than 10% for a larg change in ß illustrates that this is a good way to establish a specific collector.
Assume that the diodes can be represented by the constant-voltage-drop model with VD =0.7 V.
Characterize the circuit as a hard or soft limiter. What is the value of K? Estimate L+and L-.
Design limiter circuits using only diodes and 10-kO_ resistors to provide an output signal limited to the range.
Design a two-sided limiting circuit using a resistor, two diodes, and two power supplies to feed a 1-kO load with nominal limiting levels.
Use the diode exponential model to provide a calibrated sketch of the voltages at outputs B and C versus vA.
Use the diode exponential model and assume that all diodes are 1-mA units (i.e., each exhibits a 0.7-V drop at a current of 1 mA).
The terminal voltages of various npn transistors are measured during operation in their respective circuits.
Two transistors, fabricated with the same technology but having different junction areas, when operated at a base-emitter voltage of 0.75 V.
For a transistor in the same technology but with an emitter junction that is 32 times larger, what is the saturation current?
Two transistors have EBJ areas as follows: AE1 = 200 µm × 200 µm and AE 2 = 0.4 µm × 0.4 µm.
What is the maximum current that the zener in your design is required to conduct? What is the zener power dissipation under this condition?