Your answer has two parameters the average thickness of the


Let the texturized Si floating gate be modeled by semi-spherical hills. Calculate the radius of the hemisphere that would increase the write/erase time by 100 over the flat poly-Si/SiO2 interface. Use the Fowler-Nordheim tunneling rate formulae. (Hint: Calculate the electric field at the tip of the hemisphere relative to the electric field at the plane. Your answer has two parameters, the average thickness of the tunnel oxide and the radius of the hemispherical Si intrusion into the oxide.)

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Mechanical Engineering: Your answer has two parameters the average thickness of the
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