1) If you want to increase the space charge width on the n side of a p,n junction do you add or remove donors on that side?
2) When a forward bias is applied across a junction is the increased current flow due to movement of the Fermi level closer to the band edge or to lowering of the potential barrier?
3) True or false: The total current is constant with position across the junction region because the individual electron and hole contributions to the total are also constant.
4) Can a junction be formed between two materials which are both n-type but which have different bandgaps and work functions?
5) In determining the dark IV characteristics of a Schottky junction with an n-type semiconductor are the transport properties of holes important?