The accurate metal work functions are recently determined using the inverse problem of Problem, that is, if NDD is known precisely, the metal work function can be calculated form the experimental forward I-V curve of the m/s diode, provided that interface trap is negligible.
Design an m/Si rectifying diode to measure the work function of Au in Si.
(Hints: Determine the range of dopant concentration and dopant type to give a rectifying barrier, and determine the current density with a guessed work function for Au. Electron affinity of Si is given.)
Problem:-
What is the peak current density and peak voltage for a abrupt p+/n+ tunnel diode in a direct material? What is the valley current if NTT traps are in the space-charge and quasi-neutral layers?
(Hint: Result are in terms of the material properties such as doping and trap concentrations, effective masses, and emission and capture rates.)