1. What arc the fundamental differences between a thermal and a photon (quantum) d etector?
2. Assuming an in terband absorption mechanism, what is the cutoff wavelength for a semiconductor with a bandgap of 0.2 eV? What is it if the bandgap is 0.02cV?
3. Calculate the electron transit time and device gain for a photoconductor under these conditions: distance between contacts=50 µm, applied voltage=lO V, minority carrier lifetime=2 x l0-7 s, J..ln = l 0000cm 2 !Vs ,
and J..lP = I OOOcm 2 / Vs .