Two possible differential amplifier designs are considered, one using BJTs and the other MOSFETs. In both cases, the collector (drain) resistors are maintained within ±2% of nominal value. The MOSFETs are operated at VOV =200 mV. What input offset voltage results in each case? What does the MOS VOS become if the devices are increased in width by a factor of 4 while the bias current is kept constant?