As part of the design process for a new transistor, an engineer uses a vacuum chamber to bombard a thin layer of silicon with ions of phosphorus (mP = 5.18 x 10-26 kg) The phosphorus ions are doubly ionized (each phosphorus ion lacks two electrons). The ions start at rest at one end of the vacuum chamber and are accelerated by an electric field over a distance of re = 37cm before they strike the silicon layer with velocity vP = 120 m/s.
Part (a) Write an expression for the potential difference Vc in volts between the initial and final points across the vacuum chamber.
Part (b) Calculate the average electric field strength Ec in V / m across the vacuum chamber.
Part (c) Calculate the average electric force FP, in N, that the electric field exerts on the phosphorus ions.