The implanted region is assumed to be rapidly annealed so, Chemistry

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The implanted region is assumed to be rapidly annealed so

Arsenic is implanted into a lightly doped p-type Si substrate at an energy of 75 keV. The dose is 1 X 10¹⁴ cm^-2. The Si substrate is tilted 7° with respect to the ion beam to make it appear amorphous.

The implanted region is assumed to be rapidly annealed so that complete electrical activation is achieved.

What is the peak electron concentration produced?

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