Question: The destructive breakdown of silicon dioxide occurs with an electric field of about 10 million V/cm. Consider an integrated MOSFET with a 4.5-nm thick oxide.
1. Determine the gate-to-source bias voltage that will result in destructive breakdown.
2. Determine the associated charge in Coulombs for a 0.18 µm x 2 µm gate.
3. Determine the associated number of electrons.