1. If the drain and gate supply voltages are dropped to 0.6V and the oxide reduced to 40A as indicated by a recent (1989-1990)IBM 0.1-micron Si nMOST at 77K, compute the device parameters required in Table 662.1. Discuss the potential bit errors due to noise.
2. Using the cross-sectional view of the MOSFET shown in Fig. 6201.1, illustrate the geometrical location and physical origin of the capacitances, resistances or conductances, and inductance of the small-signal equivalent circuit given in Fig.664.1. Reduce the distributed transmission line to the single lump representation given by this figure.