Project: Operation of Scaled MOSFETS and Transistor Breakdown
You are given an input deck from Silvaco example folder. The example simulates a MOSFET device and it uses three different models for the mobility: the CVT model, the combination of KLA, SHI and field-dependent mobility model, and the combination of Watt, concentration and field-dependent mobility model. It also includes SRH mechanisms. Run this example. It will generate two outputs:
1. Transfer characteristics
2. Mobility dependence upon transverse electric field for each of the three mobility models which in different way incorporate interface-roughness scattering.
Comment on the results obtained.
Then:
1. Calculate the threshold voltage for each of the three mobility models using the EXTRACT statement. What extract statement did you use?
2. Calculate the output characteristics for each of the three mobility models by fixing Vg to 3 V and varying Vd from 0 to 3 V. Comment on the results obtained
We also want to determine what is the breakdown voltage of this device. For that purpose, choose the MOS model with both electrons and holes present in the system and add impact ionization through the IMPACT statement using Selberrher's model for impact ionization. Generate two plots: (a) IdVd characteristics, and (b) the substrate current versus drain voltage Vd. What is the breakdown voltage of this transistor? Use MAXTRAPS and CLIMIT for simulations around the breakdown point.
When submitting the homework assignment, include the following: the ASCII file with the Silvaco ATLAS set of commands and the simulation results with the device output characteristics and the EXTRACT statement for the threshold voltage. Also include a figure that describes the mesh used in these simulations. Important note: when designing the mesh, make sure that it satisfies the requirements discussed in class. Your simulation results should not have any dependence upon the mesh size.
Attachment:- Project Assignment.rar