Measurements on a mosfet operating in the subthreshold, Chemistry

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Measurements on a mosfet operating in the subthreshold

Measurements on a MOSFET operating in the subthreshold conduction region indicate that the current changes by a factor of 10 for every 80-mV change in vGS and that Id = 20 nA at vGS = 0.16 V.

(a) Find the value of iD at Vgs = 0.

(b) For a chip having 1 billion transistors, find the current drawn from the 1-V supply VDD as a result of subthreshold conduction. Hence, estimate the resulting static power dissipation.

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